《Ieee Journal Of The Electron Devices Society》雜志的最新年發文量為92篇。
這表明該刊在每年都會精選并發表一定數量的高質量文章，以保持其在工程：電子與電氣領域的學術影響力。
該刊聚焦于工程技術-工程：電子與電氣領域的前沿研究，致力于推動該領域新技術和新知識的傳播與應用。同時它積極鼓勵研究人員詳細發表其高質量的實驗研究和理論成果。
該刊的平均審稿周期約為 9 Weeks 。
Ieee Journal Of The Electron Devices Society 雜志發文統計
文章名稱引用次數
- FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability21
- Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures19
- Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K14
- Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration11
- Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOx11
- Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures11
- Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions10
- Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process10
- Development and Fabrication of AlGaInP-Based Flip-Chip Micro-LEDs10
- Experimental Investigations of State-of-the-Art 650-V Class Power MOSFETs for Cryogenic Power Conversion at 77K10
國家/地區發文量
- CHINA MAINLAND168
- USA99
- Taiwan98
- South Korea74
- Japan61
- India40
- France29
- GERMANY (FED REP GER)27
- Switzerland23
- Belgium20
