《Ieee Electron Device Letters》雜志的最新年發文量為477篇。
這表明該刊在每年都會精選并發表一定數量的高質量文章，以保持其在工程：電子與電氣領域的學術影響力。
該刊聚焦于工程技術-工程：電子與電氣領域的前沿研究，致力于推動該領域新技術和新知識的傳播與應用。同時它積極鼓勵研究人員詳細發表其高質量的實驗研究和理論成果。
該刊的平均審稿周期約為 約1.3個月 。
Ieee Electron Device Letters 雜志發文統計
文章名稱引用次數
- Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage > 1 kV38
- An Artificial Neuron Based on a Threshold Switching Memristor36
- Recessed-Gate Enhancement-Mode beta-Ga2O3 MOSFETs28
- Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque27
- Current Aperture Vertical beta-Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping27
- beta-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz26
- Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation24
- 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs24
- Vertical Ga(2)O(3 )Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga's Figure-of-Merit of 0.6 GW/cm(2)23
- First Demonstration of a Logic-Process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications22
國家/地區發文量
- CHINA MAINLAND577
- USA282
- South Korea174
- Taiwan123
- Japan65
- England60
- India49
- Belgium37
- GERMANY (FED REP GER)37
- France32
