《Microelectronics Reliability》雜志的最新年發(fā)文量為310篇。
這表明該刊在每年都會(huì)精選并發(fā)表一定數(shù)量的高質(zhì)量文章，以保持其在工程：電子與電氣領(lǐng)域的學(xué)術(shù)影響力。
該刊聚焦于工程技術(shù)-工程：電子與電氣領(lǐng)域的前沿研究，致力于推動(dòng)該領(lǐng)域新技術(shù)和新知識(shí)的傳播與應(yīng)用。同時(shí)它積極鼓勵(lì)研究人員詳細(xì)發(fā)表其高質(zhì)量的實(shí)驗(yàn)研究和理論成果。
該刊的平均審稿周期約為 較快,2-4周 約8.3周。
Microelectronics Reliability 雜志發(fā)文統(tǒng)計(jì)
文章名稱引用次數(shù)
- Comphy - A compact-physics framework for unified modeling of BTI25
- An improved unscented particle filter approach for lithium-ion battery remaining useful life prediction25
- Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs21
- Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence16
- Controversial issues in negative bias temperature instability13
- An Android mutation malware detection based on deep learning using visualization of importance from codes13
- A review of NBTI mechanisms and models12
- New dynamic electro-thermo-optical model of power LEDs12
- Measurement considerations for evaluating BTI effects in SiC MOSFETs11
- Border traps and bias-temperature instabilities in MOS devices10
